CS2N65A3HY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energ.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1 VGS E.
VDSS
650 V
CS2N65 A3HY, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.9 Ω
performance and enhance the aval.
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